CONTROL OF STEP STRUCTURES OF SI(001) BY HIGHLY DOPED AS

Citation
T. Shimizu et al., CONTROL OF STEP STRUCTURES OF SI(001) BY HIGHLY DOPED AS, Applied surface science, 132, 1998, pp. 771-775
Citations number
6
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
771 - 775
Database
ISI
SICI code
0169-4332(1998)132:<771:COSSOS>2.0.ZU;2-2
Abstract
We investigated the influence of highly doped As on the step structure s of Si(001) by using a Scanning Tunneling Microscope (STM). Line shap ed protrusions on the terraces and regularly aligned triangular-shaped step structures were observed. To clarify the formation mechanism of the peculiar structures, an Atom Probe combined with an STM system was used to know the chemical species on the surface. The AP mass spectru m showed that As as well as Si atoms were clearly detected. Further As concentration was much higher than the bulk concentration. The surfac e structures may be formed by the outdiffusion of As atom to the surfa ce. (C) 1998 Elsevier Science B.V. All rights reserved.