FABRICATION AND CHARACTERIZATION OF FIELD-EFFECT TRANSISTORS USING DONOR AND ACCEPTOR STACKED LAYERS

We fabricated field-effect transistors (FETs) using donor (TMTSF) and acceptor (TCNQ) stacked layers, and we investigated the change of cond uctivity in the charge transfer (CT) complex layer by applying gate vo ltages. Two types of FETs having TMTSF/TCNQ and TCNQ/TMTSF structures are examined. The stacked-layer FET shows a large transconductance com pared with a single-layer FET. The experimental results demonstrate th at the CT complex layer formed between donor and acceptor films mainly works as a conduction channel. Furthermore, the change in the degree of charge transfer (corresponding to conductivity change) is confirmed by infrared absorption spectra. (C) 1998 Elsevier Science B.V. All ri ghts reserved.