NEW-TYPE OF PHOTOELECTRIC CONVERTER BASED ON AN N-CDO A-C/P-SI HETEROSTRUCTURE/

A new system for a photoelectric converter is proposed, and its photoe lectric properties are studied, using an n-CdO/a-C/p-Si heterostructur e as an example. The distinguishing feature of the structure is that t he broad-band insulating layer of SiO2 on the surface of the silicon i s replaced by a narrow-band layer of amorphous carbon, while a layer o f CdO is used as the upper electrode. It is shown that an increase of the short-circuit current because of impact ionization can be expected in such a heterostructure. The results of the paper show that it is w orthwhile to use CdO films in practice as transparent electrodes. (C) 1997 American Institute of Physics.