PULSE CHARACTERISTICS OF HG0.8CD0.2TE N(-P JUNCTIONS())

The pulse characteristics of Hg0.8Cd0.2Te n(+)-p junctions are investi gated. It is shown that the shape of the voltage pulse appearing in a junction on passage of a forward (reverse) current is determined by th e recombination (generation) of nonequilibrium electrons in the hole r egion. An increase in the current pulse causes the appearance of an el ectric held, which draws electrons into the interior of the base regio n, and leads to variation of their lifetime because of the complex str ucture of the n(+)-p junction. (C) 1997 American Institute of Physics. [S1063-7842(97)02507-5].