DEFECT-RELATED AUGER EXCITATION OF ERBIUM IONS IN AMORPHOUS-SILICON

A transition probability for defect-related Auger excitation (DRAE) of rare-earth ion inserted into amorphous matrix is calculated. The resu lt is applied to excitation of an erbium ion in amorphous silicon occu rring via capture of an electron by the dangling bond (D) defect. We h ave demonstrated high efficiency of the DRAE process which ensures pho to- and electroluminescence of erbium ions in amorphous silicon matrix . It is shown that the temperature quenching of erbium luminescence in amorphous silicon is controlled by competition of the DRAE and the mu ltiphonon nonradiative transitions. (C) 1998 Elsevier Science B.V. All rights reserved.