PHOTOLUMINESCENCE TEMPERATURE-DEPENDENCE OF GAAS ALGAAS QUANTUM-WELLSEMBEDDED IN A MICROCAVITY/

Authors
OPHERLIPSON M COHEN E FISHER TA SKOLNICK MS LINDER E ROBERTS JS
Citation
M. Opherlipson et al., PHOTOLUMINESCENCE TEMPERATURE-DEPENDENCE OF GAAS ALGAAS QUANTUM-WELLSEMBEDDED IN A MICROCAVITY/, Solid state communications, 107(5), 1998, pp. 253-256
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
107
Issue
5
Year of publication
1998
Pages
253 - 256
Database
ISI
SICI code
0038-1098(1998)107:5<253:PTOGAQ>2.0.ZU;2-Y
Abstract
The photoluminescence (PL) and reflection spectra of GaAs quantum well s embedded in a quantum microcavity are studied as a function of tempe rature (30 < T < 80 K). The PL spectra are calculated assuming thermal equilibrium between the strongly coupled (e1:hh1)1S, (e1:lh1)1S excit ons and the microcavity mode. The model provides an adequate descripti on of the reflection and PL spectral shape and relative bands intensit ies. (C) 1998 Elsevier Science Ltd. All rights reserved.