The model of the pressure effect on the critical temperature T-c,in hi
gh-temperature superconductors [II], earlier proposed by the present a
uthor and consisting in the increase of the pair wave function overlap
with increase in pressure p that in its manifestations is equivalent
to an increase in doping, is compared with the recent experimental dat
a [1-4]. By making this model more precise for inhomogeneous specimens
, we obtained the doping region near the optimal one where the critica
l temperature is independent of doping, and the pressure region where
it is independent of pressure. It is shown that, as observed in [1,2],
the dependence of dT(c)/dp on doping in HgBa2CuO4+delta after excludi
ng the influence of the specimen's inhomogeneous structure is explaine
d satisfactorily by the model of [11]. So the introduction in [1,2] of
a term in T-c,proportional to p(2) is unnecessary. An analogous compa
rison is made for YBa2Cu3O6+y.