LOW-MELTING POINT COPPER PRECURSOR TO PRE PARE YBA2CU3O7-DELTA THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

A low melting point copper complex was found as a copper precursor whi ch can be vaporized in the liquid state when YBa2Cu3O7-delta, thin fil ms are prepared by metalorganic chemical vapor deposition (MOCVD). It is confirmed that bis (6-ethyl-2,2-dimethyl-3,5-octanedionato) copper (Cu(EDMOD)(2)) is suited for a copper precursor for MOCVD from the res ult of melting point measurement and thermal analysis. CuO thin films could be prepared by MOCVD using liquid Cu(EDMOD)2 heated at the tempe rature higher than its melting point (78 degrees C). It is expected th at Cu(EDMOD)(2) can be used in the range of 80-90 degrees C as a coppe r precursor to prepare YBa2Cu3O7-delta by comparison with one of the c onventional copper precursors, bis (isobutyrylpivaloylmethanato) coppe r (Cu(IBPM)(2)).