HIGH-FREQUENCY FLIP-CHIP BONDING TECHNOLOGIES AND THEIR APPLICATION TO MICROWAVE MILLIMETER-WAVE ICS/

Citation
H. Sakai et al., HIGH-FREQUENCY FLIP-CHIP BONDING TECHNOLOGIES AND THEIR APPLICATION TO MICROWAVE MILLIMETER-WAVE ICS/, IEICE transactions on electronics, E81C(6), 1998, pp. 810-818
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09168524
Volume
E81C
Issue
6
Year of publication
1998
Pages
810 - 818
Database
ISI
SICI code
0916-8524(1998)E81C:6<810:HFBTAT>2.0.ZU;2-O
Abstract
This paper describes new IC design concepts using flip-chip bonding te chnologies for microwave and millimeter-wave circuit integration. Two types of bonding technologies, stud bump bonding(SBB)and micro bump bo nding (MBB) are introduced, and their applications to microwave and mi llimeter-wave ICs are presented. Receiver front-end hybrid IC (HIC) fo r cellular and PHS handsets using SBB and new millimeter-wave ICs on S i substrate called millimeter Aip-chip IC (MFIC) using MBB have been d esigned and fabricated to prove their advantages. These flip-chip bond ing technologies are experimentally proven to provide excellent soluti ons for high performance and compact-sized ICs with low-cost. The HIC concept is applicable consistently over a wide range of devices from R F/microwave to millimeter-wave region.