Kk. Kawakyu et al., A 2-V OPERATION RESONANT-TYPE T R-SWITCH WITH LOW DISTORTION CHARACTERISTICS FOR 1,9-GHZ PHS/, IEICE transactions on electronics, E81C(6), 1998, pp. 862-867
Two approaches to the design of resonant-type switches with low distor
tion characteristics operating at a 2-V power supply voltage have been
proposed for use in the 1.9-GHz-band personal handy phone system (PHS
). One approach is to use three stacked FETs at the receiver side. The
y are composed of a dual-gate FET and a single-gate FET. An insertion
loss of 0.41 dB and an isolation of 44.0 dB were obtained at 1.9 GHz.
A third-order distortion value of -52 dBc was achieved at 19 dBm outpu
t power. Another approach is to insert a capacitor in the resonator. A
third-order distortion of -49 dBc at 19-dBm output power when two sta
cked FETs were used at the receiver side. The layout area of the reson
ator is drastically reduced as compared with the above-mentioned case.