A 2-V OPERATION RESONANT-TYPE T R-SWITCH WITH LOW DISTORTION CHARACTERISTICS FOR 1,9-GHZ PHS/

Two approaches to the design of resonant-type switches with low distor tion characteristics operating at a 2-V power supply voltage have been proposed for use in the 1.9-GHz-band personal handy phone system (PHS ). One approach is to use three stacked FETs at the receiver side. The y are composed of a dual-gate FET and a single-gate FET. An insertion loss of 0.41 dB and an isolation of 44.0 dB were obtained at 1.9 GHz. A third-order distortion value of -52 dBc was achieved at 19 dBm outpu t power. Another approach is to insert a capacitor in the resonator. A third-order distortion of -49 dBc at 19-dBm output power when two sta cked FETs were used at the receiver side. The layout area of the reson ator is drastically reduced as compared with the above-mentioned case.