PHYSICAL ASPECTS OF MULTIFUNCTIONAL SENSORS BASED ON PIEZOTHERMOMAGNETIC EFFECTS IN SEMICONDUCTORS

The physical aspects of multifunctional sensors which are based on the influence of strain on all the kinetic effects in semiconductors (res istivity, Seebeck effect, thermal conductivity and thermogalvanomagnet ic properties) have been considered. The special features of the combi ned effects manifested in p-type silicon and germanium as well as in l aser-recrystallized polycrystalline silicon layers have been studied i n order to create a new type of physical sensor. A theoretical estimat ion of the longitudinal piezothermomagnetic effects in doped p-Si show s the values of the piezo-thermal conductivity, piezo-Hall, piezo-Seeb eck and piezo-Peltier effects to be high enough for the development of mechanical, thermal and magnetic sensors based on them. (C) 1998 Else vier Science S.A. All rights reserved.