HALL SENSORS BASED ON HEAVILY-DOPED N-INSB THIN-FILMS

On the basis of experimental data, it has been shown that donor-doped InSb thin films with high electron mobility can be used both for the p roduction of signal Hall sensors and measurement Hall sensors. In thos e sensors the magnetic-field sensitivity K and the temperature coeffic ient of the output voltage beta can be smoothly changed by doping from K greater than or equal to 1 V T-1 and \beta\ = 1.5% degrees C-1 in t he undoped or lightly doped films to K greater than or equal to 0.05 V T-1 and \beta\ less than or equal to 0.01% degrees C-1 in the sensors based on films with an electron concentration of (1-2) x 10(18) cm(-3 ). Such quality and variety of the basic parameters cannot be achieved in any other Hall sensors based an a single thin-him semiconducting m aterial. (C) 1998 Elsevier Science S.A. All rights reserved.