Thin, boron-doped diamond films formed on: a silicon substrate were ev
aluated during water electrolysis in acidic solution in order to deter
mine their potential for industrial use; Though the electrode exhibite
d overvoltages in excess of 2 V in the industrial current range, ozone
gas was produced at a: current efficiency of a few percent at ambient
temperature. IL was confirmed that the consumption rate of the highly
doped-sample was small and comparable with a platinum-plated anode, i
ndicating that the diamond is dimensionally stable under extreme condi
tions. The failure mechanism in the test is discussed on the basis of
scanning electron microscopy, X-ray diffraction and Raman analyses. Th
e spalling of the film from the substrate, which was observed in the d
eteriorated sample after the electrolysis, is attributed to the residu
al stress that accumulated during the production process carried out u
nder high temperature.