INCORPORATION OF CADMIUM-SULFIDE INTO NANOPOROUS SILICON BY SEQUENTIAL CHEMICAL-DEPOSITION FROM SOLUTION

The incorporation of cadmium sulfide into porous silicon is investigat ed with the aim of realizing electrical contacts with the inner surfac e of the porous material. This is achieved by using a sequential chemi cal bath deposition method, consisting of the deposition of a few mono layers of cadmium hydroxide in a first solution, and conversion into c admium sulfide in a second solution containing thioacetamide. This seq uence is repeated five times until the pores are completely full. The chemical deposition process is assessed by a detailed analysis of the solution chemistry. Characterizations of the deposit by scanning elect ron microscopy, X-ray fluorescence, Auger electron spectroscopy, Ruthe rford back scattering, and X-ray photoelectron spectroscopy are presen ted and-confirm good pore penetration by CdS, with only a weak concent ration gradient from the top to the bottom of the porous layer.