EFFECT OF THE GAS-PHASE REACTION IN METALLORGANIC CHEMICAL-VAPOR-DEPOSITION OF TIN FROM TETRAKIS(DIMETHYLAMIDO)TITANIUM

The effect of the gas-phase reaction on the deposition rate and the pr operties of TiN films from metallorganic chemical vapor deposition wit h tetrakis(dimethylamido)titanium was investigated. In situ Fourier tr ansform infrared spectrometry was used to study the gas-phase reaction mechanism, and the deposition of TiN films was carried out in a low p ressure, cold-wall chemical vapor deposition reactor at a deposition t emperature from 200 to 400 degrees C. It was observed that tetrakis(di methylamido)titanium in the gas phase was dissociated into dimethylami ne above 280 degrees C, and, in this case, the deposition rate was dec reased and a Ti-rich film was formed. It was shown that the gas-phase reaction has a significant effect not only on the deposition rate but also on the film properties.