Va. Muratov et al., TRIBOCHEMICAL REACTIONS OF SILICON - AN IN-SITU INFRARED-SPECTROSCOPYCHARACTERIZATION, Journal of the Electrochemical Society, 145(7), 1998, pp. 2465-2470
Citations number
48
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
This paper describes the tribochemical reactions of silicon against a
polymer pad as studied by attenuated total internal reflection Fourier
transform infrared spectroscopy. The evolution of the silicon surface
and chemical species formed on the surface during rubbing have been s
tudied in solutions with values of pH 4, 7, and 10. It is shown that t
he process of material removal (that can be tailored to function as a
form of tribochemical polishing) proceeds most intensively in the solu
tion with pH 10. The tribochemical reaction of silicon hydrides, e.g.,
SiHx and SiOSiHx reversible arrow Si-(OH)(x), (x = 1...3) is observed
directly and believed to be the limiting step in the material removal
process during rubbing in an alkaline solution. Then, hydrolysis of S
i-H bonds leads to the formation of silanol groups on the surface (Si-
OH), that in turn weaken the Si-Si backbonds and allow material to be
removed from the surface in the form of silicon hydroxide or, most com
monly, silicic acid (Si(OH)(4)). The simultaneous action of friction a
nd chemical reactions enhances the dissolution of the material at the
asperity contact zones, which results in surface smoothing. No evidenc
e of the formation and abrasion of surface silica layer has been found
during rubbing.