INTERFACE STATES DISTRIBUTION IN ELECTRICAL STRESSED OXYNITRIDED GATE-OXIDE

Quasi-static capacitance measurements and deep level transient spectro scopy measurements were combined to analyze the density of interface s tates in N2O oxynitrides after constant-current Fowler-Nordheim inject ion from the silicon. Two defect levels are found, around E-t1 = E-c - 0.33 eV and E-t2 = E-c - 0.2 eV, having capture cross sections of 2 x 10(-17) cm(2) and 3 x 10(-18) cm(2), respectively. The stress creates a very high density of E-t1 in the control sample. Stress-induced E-t 1 are associated with P-b centers, and their density decreases with in creasing N2O treatment temperature from 850 to 1050 degrees C. E-t2 ar e detected in the oxynitrided layers before and after the stress and a re much less affected by electrical stress than E-t1.