IMPACT OF HIGH-TEMPERATURE DRY LOCAL OXIDATION ON GATE OXIDE QUALITY

Charge-to-breakdown evaluation of gate oxide obtained by implementing high-temperature dry oxidation for field oxide growth has been perform ed. A remarkable improvement in gate oxide quality has been noted with respect to that obtained using the conventional medium-temperature we t oxidation. Experimental results have shown that the quality of the g ate oxide grown close to the active area border has an important role in reliability improvement. Further, by simultaneously performing the well drive-in and the high-temperature dry field oxidation, stacking f ault density reduction in the active area is observed. This also has a beneficial impact on the gate oxide quality.