ELECTROLUMINESCENT SIO2 SI SUPERLATTICES PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION/

Citation
L. Heikkila et al., ELECTROLUMINESCENT SIO2 SI SUPERLATTICES PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION/, Applied surface science, 133(1-2), 1998, pp. 84-88
Citations number
10
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
133
Issue
1-2
Year of publication
1998
Pages
84 - 88
Database
ISI
SICI code
0169-4332(1998)133:1-2<84:ESSSPB>2.0.ZU;2-Q
Abstract
SiO2/Si superlattices were fabricated by low pressure chemical vapour deposition. Superlattices of 1-6 nm in layer thickness and having 1-60 layer pairs were investigated in order to evaluate their surface stru cture and electroluminescent properties. The atomic force microscope ( AFM) studies are presented for investigation of surface morphology, an d the transmission electron microscope (TEM) analysis for revealing la yer structure. The current-voltage characteristics and the electrolumi nescence spectrum are also shown. The experimental results show that t he superlattices prepared by chemical vapour deposition can emit visib le light when the forward bias voltage exceeded 6 V. (C) 1998 Elsevier Science B.V. All rights reserved.