EFFECT OF H-2 DILUTION ON THE SURFACE-COMPOSITION OF PLASMA-DEPOSITEDSILICON FILMS FROM SIH4

Authors
MARRA DC EDELBERG EA NAONE RL AYDIL ES
Citation
Dc. Marra et al., EFFECT OF H-2 DILUTION ON THE SURFACE-COMPOSITION OF PLASMA-DEPOSITEDSILICON FILMS FROM SIH4, Applied surface science, 133(1-2), 1998, pp. 148-151
Citations number
15
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
133
Issue
1-2
Year of publication
1998
Pages
148 - 151
Database
ISI
SICI code
0169-4332(1998)133:1-2<148:EOHDOT>2.0.ZU;2-G
Abstract
The surface composition of silicon films deposited from SiH4, Ar, and H-2 plasmas was studied using in situ attenuated total reflection Four ier transform infrared spectroscopy with emphasis on the effects of H- 2 dilution. In the absence of H-2, the surface is primarily covered wi th SiH3 and SiH2. With heavy H-2 dilution, the surface is predominantl y monohydride terminated with infrared absorption frequencies consiste nt with the presence of SiH on Si (100) and Si (111) surfaces. (C) 199 8 Elsevier Science B.V. All rights reserved.