Dc. Marra et al., EFFECT OF H-2 DILUTION ON THE SURFACE-COMPOSITION OF PLASMA-DEPOSITEDSILICON FILMS FROM SIH4, Applied surface science, 133(1-2), 1998, pp. 148-151
Citations number
15
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The surface composition of silicon films deposited from SiH4, Ar, and
H-2 plasmas was studied using in situ attenuated total reflection Four
ier transform infrared spectroscopy with emphasis on the effects of H-
2 dilution. In the absence of H-2, the surface is primarily covered wi
th SiH3 and SiH2. With heavy H-2 dilution, the surface is predominantl
y monohydride terminated with infrared absorption frequencies consiste
nt with the presence of SiH on Si (100) and Si (111) surfaces. (C) 199
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