60-GHZ MONOLITHIC DOWN-CONVERTER AND UP-CONVERTER UTILIZING A SOURCE-INJECTION CONCEPT
Citation
M. Madihian et al., 60-GHZ MONOLITHIC DOWN-CONVERTER AND UP-CONVERTER UTILIZING A SOURCE-INJECTION CONCEPT, IEEE transactions on microwave theory and techniques, 46(7), 1998, pp. 1003-1006
Categorie Soggetti
Engineering, Eletrical & Electronic
SICI code
0018-9480(1998)46:7<1003:6MDAUU>2.0.ZU;2-P
Abstract
This paper deals with the design considerations, fabrication process,
and performance of coplanar waveguide (CPW) heterojunction FET (HJFET)
down- and up-converter monolithic microwave integrated circuits (MMIC
's) for V-band wireless system applications. To realize a mixer featur
ing a simple structure with inherently isolated ports, and yet permitt
ing independent port matching and low local oscillator (LO) power oper
ation, a ''source-injection'' concept is utilized by treating the HJFE
T as a three-port device in which the LO signal is injected through th
e source terminal, the RF (or IF) signal through the gate terminal, an
d the IF (or RF) signal is extracted from the drain terminal. The down
-converter chip incorporates an image-rejection filter and a source-in
jection mixer. The up-converter chip incorporates a source-injection m
ixer and an output RF filter. With an LO power and frequency of 7 dBm
and 60.4 GHz, both converters can operate at any IF frequency within 0
.5-2 GHz, with a corresponding conversion gain within -7 to -12 dB, pr
imarily dominated by the related filter's insertion loss. Chip size is
3.3 mm x 2 mm for the down-converter, and 3.5 mm x 1.8 mm for the up-
converter.