PHYSICAL SCALING RULES FOR ALGAAS GAAS POWER HBTS BASED ON A SMALL-SIGNAL EQUIVALENT-CIRCUIT/

Authors
SCHAPER U ZWICKNAGL P
Citation
U. Schaper et P. Zwicknagl, PHYSICAL SCALING RULES FOR ALGAAS GAAS POWER HBTS BASED ON A SMALL-SIGNAL EQUIVALENT-CIRCUIT/, IEEE transactions on microwave theory and techniques, 46(7), 1998, pp. 1006-1009
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
46
Issue
7
Year of publication
1998
Pages
1006 - 1009
Database
ISI
SICI code
0018-9480(1998)46:7<1006:PSRFAG>2.0.ZU;2-I
Abstract
Physical scaling rules for AlGaAs/GaAs heterojunction bipolar transist ors (WT's) containing 2-16 emitter fingers are demonstrated. The param eter extraction is based on a small-signal equivalent circuit. The sca ling parameters compare favorably with the measured data from the proc ess control monitor.