A SUBNANOSECOND RESONANT-TYPE MONOLITHIC T R SWITCH FOR MILLIMETER-WAVE SYSTEMS APPLICATIONS/

This paper is concerned with the design consideration, fabrication pro cess, and performance of a V-band monolithic transmit/receive (T/R) sn itch for millimeter-wave wireless networks applications. The developed snitch integrated circuit (IC) has a novel structure in which to pass a signal, it presents a parallel resonant circuit to the signal by fo rward biasing a pair of snitching heterojunction FET's (HJFET's), but to block the signal, it presents a series resonant circuit to the sign al by reverse biasing the snitching HJFET's. With a control voltage of 0/3.2 V, the developed T/R switch exhibits a minimum insertion loss o f 3.9 dB, a maximum isolation of 41 dB, and a high snitching speed of 250 ps, over 57-61 GHz. The monolithic T/R switch chip size is 3.3 mm x 1.7 mm.