QUANTITATIVE MOBILITY SPECTRUM ANALYSIS O F N-HGCDTE ACCUMULATED LAYERS

Authors
GUI YS ZHENG GZ CAI Y CHU JH
Citation
Ys. Gui et al., QUANTITATIVE MOBILITY SPECTRUM ANALYSIS O F N-HGCDTE ACCUMULATED LAYERS, Hongwai yu haomibo xuebao, 17(3), 1998, pp. 182-186
Citations number
15
Categorie Soggetti
Optics
Journal title
Hongwai yu haomibo xuebao → ACNP
ISSN journal
10019014
Volume
17
Issue
3
Year of publication
1998
Pages
182 - 186
Database
ISI
SICI code
1001-9014(1998)17:3<182:QMSAOF>2.0.ZU;2-3
Abstract
By using quantitative mobility spectrum analysis technique, the densit y and mobility for each subband of the accumulated layer on the n-HgCd Te devices were determined from field-dependent Hall and resistivity d ata. The results agree well with the shubnikovde Hass measurements and theoretical calculations.