A black box model is derived for an erbium-doped optical amplifier and
is successfully applied to 1480 and 980 mn pumped devices operated un
der conditions which are typical for wavelength division multiplex (WD
M) systems. It allows compound optical amplifiers with arbitrary passi
ve optical circuitry (isolators, couplers, taps, and equalizing filter
s) to be modeled on the basis of ''black box'' characteristics. The ga
in model is based on an analytic solution for the effective two-level
laser system, i.e., it is equivalent with the results of most numerica
l EDFA modeling tools. The model for amplified spontaneous emission (A
SE) based on an equivalent ASE source in front of the amplifier can be
applied over a aide range of operating points.