RELIABILITY OF 1300-NM SPOT-SIZE CONVERTER INTEGRATED LASER-DIODES FOR LOW-COST OPTICAL MODULES IN ACCESS NETWORKS

This paper discusses the degradation behaviors and reliability of spot -size converter integrated laser diodes fabricated using the full wafe r process with dry etching and metal organic vapor phase epitaxy (MOVP E). Failure criteria applicable to actual access networks were determi ned based on the degradation behavior exhibited in several aging tests , and device lifetimes were then estimated. The far-field patterns and wide-temperature operation required for low-cost system application s carcely changed during degradation, even after a 150% increase in thre shold current, Within this degradation range, the device life for syst em application is estimated to be more than 10(5) h at 60 degrees C an d 10 mW.