EPITAXIAL-GROWTH OF BETA-SIC ON SILICON BY BIAS-ASSISTED HOT-FILAMENTCHEMICAL-VAPOR-DEPOSITION FROM SOLID GRAPHITE AND SILICON SOURCES

Epitaxial beta-SiC film has been grown on a mirror-polished Si(111) su bstrate using bias-assisted hot filament chemical vapor deposition (BA -HFCVD) at a substrate temperature of 1000 degrees C. A graphite plate was used as the only carbon source, and hydrogen was the only feeding gas to the deposition system. Atomic hydrogen, produced by hot filame nts, reacted with the graphite to form hydrocarbon radicals which furt her reacted with the silicon substrate and deposited as beta-SiC. The effect of negatively biasing the substrate is the key factor for epita xial growth. Under the same growth conditions without negative bias, p olycrystalline beta-SiC resulted.