SILICON-CARBIDE GROWN BY LIQUID-PHASE EPITAXY IN MICROGRAVITY

6H and 4H polytype silicon carbide (SiC) layers have been grown on gro und and under microgravity conditions by liquid phase epitaxy (LPE) fr om a solution of SiC in Si-Se solvent at 1750 degrees C. The effects o f gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural d efects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained ar e intriguing as to further experiments providing objects for carrier l ifetime measurements.