STRUCTURAL-CHANGE OF TIN TI/SIO2 MULTILAYERS BY N-2 ANNEALING/

We investigated the structural change of TiN/Ti/thick SiO2 multilayers as a function of annealing temperature by X-ray diffraction (XRD), tr ansmission electron microscopy (TEM), and secondary ion mass spectrosc opy (SIMS). XRD analysis and N concentration profiles determined by SI MS showed that the initial Ti(002) film changes to TiN (111) at anneal ing temperatures higher than 450 degrees C. TEM observations revealed that the interface between TiN and Ti become less distinct at annealin g temperatures higher than 450 degrees C, and we found an amorphous la yer at the interface between the Ti and the SiO2 layer. The O concentr ation profile determined by SIMS suggested that this layer was mainly TiOx. (C) 1998 Elsevier Science S.A. All rights reserved.