EFFECT OF IMPLANTATION OXIDE ON THE TI-SILICIDATION AND CO-SILICIDATION OF NARROW DIFFUSION AND POLY-LINES

Authors
LAUWERS A NAEM A DEPOTTER M MAEX K
Citation
A. Lauwers et al., EFFECT OF IMPLANTATION OXIDE ON THE TI-SILICIDATION AND CO-SILICIDATION OF NARROW DIFFUSION AND POLY-LINES, Thin solid films, 320(1), 1998, pp. 122-127
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
320
Issue
1
Year of publication
1998
Pages
122 - 127
Database
ISI
SICI code
0040-6090(1998)320:1<122:EOIOOT>2.0.ZU;2-K
Abstract
The effect of implanting As or BF, through an implantation oxide on th e Ti- and Co-silicidation of narrow n(+) diffusion and n(+) and p(+) p oly-Si lines has been investigated. The impact of using an implantatio n oxide is different depending on the crystallinity of the Si, dopant type, implant dose and silicide type. The observed increase in sheet r esistance of the narrow silicided lines can be related to the presence of knock-on oxygen in the Si. (C) 1998 Elsevier Science S.A. All righ ts reserved.