PATTERNED THICK PHOTORESIST LAYERS FOR PROTECTION OF PROTRUDING STRUCTURES DURING WET AND DRY-ETCHING PROCESSES

Authors
INDERMUHLE PF ROTH S DELLMANN L DEROOIJ NF
Citation
Pf. Indermuhle et al., PATTERNED THICK PHOTORESIST LAYERS FOR PROTECTION OF PROTRUDING STRUCTURES DURING WET AND DRY-ETCHING PROCESSES, Journal of micromechanics and microengineering, 8(2), 1998, pp. 74-76
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical","Instument & Instrumentation
Journal title
Journal of micromechanics and microengineering → ACNP
ISSN journal
09601317
Volume
8
Issue
2
Year of publication
1998
Pages
74 - 76
Database
ISI
SICI code
0960-1317(1998)8:2<74:PTPLFP>2.0.ZU;2-D
Abstract
Thick photoresist (about 40 mu m) was patterned and used as a protecti ve layer for protruding structures (sharp, high aspect ratio atomic fo rce microscope tips) in wet (buffered hydrofluoric acid) and dry (reac tive ion etching) etching. The process and results of its use are disc ussed, and some applications are proposed.