The heat treatment of metallised compound semiconductors results mater
ial diffusion and evaporation, called volatile component loss. In situ
SEM and mass spectrometric study showed, that surface pattern has fra
ctal character at heat treatment temperatures, where the volatile comp
onent loss has maximum value. The so-called fractal dimension or scali
ng factor of self-similarity (D) was evaluated for Au/lnP (D = 1.57 +/
- 0.01), Pd/InP (D = 1.75 +/- 0.01) and Au/Pd/InP contacts. The compar
ison of SEI and BEI images suggested that the geometrical surface patt
erns, resulted by the balling-up phenomenon, and the pattern, which po
ssible describes the phase inhomogeneity on the same contact, can be c
haracterised by different values of the fractal dimension. In the case
of the studied Au/Pd/InP contact, D was 1.56 +/- 0.02 for balling up
and D was 1.84 +/- 0.01 for phase distribution. (C) 1998 Elsevier Scie
nce S.A.