ELECTRICAL PROPERTY ON COPPER THIN-FILM WITH CHROMIUM UNDER-LAYER

Temperature coefficient of resistance (TCR) of as-deposited and anneal ed atomic beam-deposited polycrystalline copper films of 20 nm with ch romium under-layer on SiOx substrate layers was measured. The copper r esistivity for various chromium thicknesses was in situ measured durin g copper deposition. The TCR of the as-deposited films decreases with the chromium thickness to reach a minimum value at about 5 nm. The min imum TCR value for the annealed copper films exists at the chromium th ickness equal to about 1 nm. When chromium thickness is less than 2 nm the annealing markedly decreases the TCR of the copper film. (C) 1998 Elsevier Science S.A.