MICROSTRUCTURAL MODIFICATION IN CO CU MULTILAYERS PREPARED BY LOW-ENERGY ION-ASSISTED DEPOSITION/

Citation
Nd. Telling et al., MICROSTRUCTURAL MODIFICATION IN CO CU MULTILAYERS PREPARED BY LOW-ENERGY ION-ASSISTED DEPOSITION/, Thin solid films, 317(1-2), 1998, pp. 278-281
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
317
Issue
1-2
Year of publication
1998
Pages
278 - 281
Database
ISI
SICI code
0040-6090(1998)317:1-2<278:MMICCM>2.0.ZU;2-P
Abstract
The microstructure of Co/Cu multilayers deposited by low energy ion-as sisted deposition was investigated. The samples studied were grown by unbalanced magnetron sputtering with and without an applied d.c. subst rate bias of -50 V. Specular and off-specular X-ray reflectivity measu rements were performed on the samples and revealed the presence of rou ghness at the interfaces that was partially correlated throughout the film. The effect of applying a -50 V bias was to suppress the correlat ion of the lower frequency roughness and to slightly reduce the bilaye r period of the multilayer. The differences between the samples are di scussed in terms of possible ion bombardment induced smoothing of the layers and densification of the microstructure. (C) 1998 Elsevier Scie nce S.A.