NEW TRANSPARENT CONDUCTING ZNO-IN2O3-SNO2 THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

Authors
MINAMI T KAKUMU T SHIMOKAWA K TAKATA S
Citation
T. Minami et al., NEW TRANSPARENT CONDUCTING ZNO-IN2O3-SNO2 THIN-FILMS PREPARED BY MAGNETRON SPUTTERING, Thin solid films, 317(1-2), 1998, pp. 318-321
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
317
Issue
1-2
Year of publication
1998
Pages
318 - 321
Database
ISI
SICI code
0040-6090(1998)317:1-2<318:NTCZTP>2.0.ZU;2-5
Abstract
New multicomponent ZnO-In2O3-SnO2 system and new In4Sn3O12 transparent conducting oxide thin films have been prepared by RF magnetron sputte ring. The In4Sn3O12 films, or In2O3-SnO2 films with a Sn/(In + Sn) ato mic ratio around 0.5, showed a resistivity of 3-4 x 10(-4) Omega cm an d an average transmittance above 80% in the visible range when they we re prepared at substrate temperatures of room temperature to 350 degre es C. In addition, the electrical properties of multicomponent Zn2In2O 5-ZnSnO3 films changed monotonically as the ZnSnO3 content was varied. (C) 1998 Elsevier Science S.A.