PREPARATION OF TRANSPARENT CONDUCTING ZN2IN2O5 FILMS BY D.C. MAGNETRON SPUTTERING

Highly transparent and conductive Zn2In2O5 films have been prepared by d.c. magnetron sputtering using targets composed of ZnO and In2O3. Th e films deposited on substrates at a temperature of 350 degrees C usin g targets with a composition (Zn:(In + Zn) atomic ratio) of approximat ely 20 to 60 at.% were identified as Zn2In2O5. The etching rate of the films in a HCl solution was strongly dependent on the Zn:(In + Zn) at omic ratio and the substrate temperature. Zn2In2O5 films deposited on substrates at a temperature of room temperature to 350 degrees C exhib ited a resistivity of 2-4 x 10(-4) Omega cm. An average transmittance of above 85% in the visible range was obtained in the films. (C) 1998 Elsevier Science S.A.