By using the r.f. sputtering technique CdNiTe nanostructured layers we
re prepared onto glass substrates. The nanoparticles in the films appe
ar to have spherical shape with broad grain-size distribution. The mea
sured average diameters were 35, 30, and 26 nm corresponding to 5, 10,
and 15 nickel percent atomic content in the film, respectively. Energ
y dispersion spectroscopy indicates that Ni enters into the CdTe latti
ce in Cd sites. The structure of the nanostructured layers was zincble
nde cubic that resembles the bulk CdTe semiconductor. Particle-size ef
fects on optical absorption spectra were observed. As the Ni content i
ncreases, the grain-size diameter diminishes, and the band-gap energy
(E-g) increases. E-g shifts have been found higher than the predicted
values from the strong and weak quantum confinement models. Disagreeme
nt was explained by considering extra E-g shifts as an effect of the l
attice shrinkage originated from the replacement of Cd2+ by Ni2+ with
smaller ionic radius, into the CdTe lattice. (C) 1998 Elsevier Science
S.A.