SILICIDE FORMATION AT PALLADIUM SURFACES - PART II - AMORPHOUS SILICIDE GROWTH AT THE PD(100) SURFACE

The morphology and reactivity of the Si/Pd(100) surface is studied by the in-situ combination of scanning tunneling microscopy (STM) and ref lection absorption infrared spectroscopy (RAIRS) of adsorbed CO. Si ad sorption on Pd( 100) is found to be reactive: above 140 K the deposite d Si reacts with the substrate to form palladium silicide. In the stud ied temperature range, 150 K less than or equal to T less than or equa l to 600 K, the silicide structure is amorphous. STM and RAIRS measure ments reveal an incomplete chemical reaction at the interface with unr eacted Si clusters interspersed in a homogeneous film of Pd2Si. (C) 19 98 Elsevier Science B.V. All rights reserved.