SUBMONOLAYER ISLAND FORMATION AND THE ONSET OF MULTILAYER GROWTH DURING AG AG(100) HOMOEPITAXY/

Results from a scanning tunneling microscopy study are presented for t he initial stags of Ag/Ag(100) homoepitaxy, and behavior is analyzed v ia Monte Carlo simulations of an appropriate lattice-gas model. Submon olayer nucleation and growth of two-dimensional islands is examined fo r substrate temperatures, T, between 295 and 370 K. The variation with Bur of the mean island density, N-av, reveals that island formation i s effectively irreversible at 295 K, and leads to an estimate of 0.38 eV for the terrace diffusion barrier (using an attempt frequency of 10 (13)/s). The variation of N-av with T reveals a transition to reversib le island formation at around 320 K. This transition temperature (and the T-dependence of N-av) are used to extract an effective value of 0. 3 eV for the bond energy of an adsorbed dimer, assuming nearest-neighb or pairwise-additive interactions between adsorbed atoms. We indicate how the actual dimer bond energy could differ, e.g. in the presence of biased diffusion of separated adatom pairs which enhances their recom bination. and thus increases effective dimer stability. The onset of m ultilayer growth, and specifically the formation of second-layer islan ds, is examined at 295 K to assess the degree of interlayer transport. Comparison with simulations yields an estimate of 30 meV for the effe ctive value of an additional step-edge barrier (using an attempt frequ ency of 10(13)/s). Using this result, subsequent multilayer kinetic ro ughening is predicted, consistent with experimental observations. (C) 1998 Elsevier Science B.V. All rights reserved.