HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING ANALYSIS OF SI-SI0.78GE0.22 (001)SI SUPERLATTICES/

Authors
BARRADAS NP JEYNES C MIRONOV OA PHILLIPS PJ PARKER EHC
Citation
Np. Barradas et al., HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING ANALYSIS OF SI-SI0.78GE0.22 (001)SI SUPERLATTICES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 239-243
Citations number
11
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
139
Issue
1-4
Year of publication
1998
Pages
239 - 243
Database
ISI
SICI code
0168-583X(1998)139:1-4<239:HDRRBA>2.0.ZU;2-N
Abstract
Si 30 nm/Si0.78Ge0.22 5 nm superlattices were grown on (0 0 1) Si by s olid source molecular beam epitaxy (MBE) at temperatures between 550 d egrees C and 810 degrees C. Their structural properties were studied b y high depth resolution RES analysis. The sample grown at the highest temperature has the sharpest interfaces, correlating well with the obs ervation by Raman spectroscopy of zone-folded acoustic modes. The Si a nd SiGe layer thickness and the Ge concentration were determined, and agree with sub-keV secondary ion mass spectroscopy (SIMS) results. Cha nnelling shows a minimum yield better than 3%, denoting a good crystal line quality of the layers. (C) 1998 Elsevier Science B.V.