ON CARBON NITRIDE SYNTHESIS AT HIGH-DOSE ION-IMPLANTATION

Authors
ROMANOVSKY EA BESPALOVA OV BORISOV AM GORYAGA NG KULIKAUSKAS VS SUKHAREV VG ZATEKIN VV
Citation
Ea. Romanovsky et al., ON CARBON NITRIDE SYNTHESIS AT HIGH-DOSE ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 355-358
Citations number
17
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
139
Issue
1-4
Year of publication
1998
Pages
355 - 358
Database
ISI
SICI code
0168-583X(1998)139:1-4<355:OCNSAH>2.0.ZU;2-Y
Abstract
Rutherford backscattering spectrometry was used for the study of high dose 35 keV nitrogen ions implantation into graphites and glassy carbo n. Quantitative data on depth profiles and its dependencies on irradia tion fluence and ion beam density were obtained. The stationary dome-s haped depth profile with maximum nitrogen concentration 22-27 at.% and half-width more than twice exceeding projected range of ions is reach ed at fluence Phi similar to 10(18) cm(-2). The dependence of the maxi mum concentration in the profile on ion current density was studied. T he largest concentration was obtained at reduced ion current density. (C) 1998 Elsevier Science B.V.