EQUIPMENT AND METHOD FOR ION-BEAM CONTROL IN IMPLANTATION AND SCIENCEEXPERIMENTS

An experimental method has been developed and electronic equipment has been created both for the experimental research of the small-angle (l ess than 10(-3) rad) scattering of ions with the energy of MeV range o n thin gaseous or single-crystal targets and for industrial applicatio ns in doping of materials by ion implantation. A discrete deflection o f the slimly collimated ion beam within some angle range is implemente d with electrostatic field of a deflector. The electronic equipment ge nerates a stepwise potential difference between the deflector plates w ith the frequency of a few kHz and forms a numerical code, correspondi ng to the deflection angle value. Due to the periodic deflection the i on beam scans the surface of the material to be doped and forms the re quired dope pattern. In the case of experimental research the beam sca ttered in a target scans a collimated detector. Deflection angle codes are recorded at the moment of ion detection and accumulated as a spec trum of the angular distribution of the scattered ions. Depending on t he task the equipment complex makes a number of operating modes availa ble. A digital-analog forming of potentials on the deflector and repre sentation of the deflection angle as a numerical code enables the micr oprocessor devices and computers to be effectively applied for forming and measuring an ion beam profile. (C) 1998 Elsevier Science B.V.