PULSED ION-BEAM FORMATION OF HIGHLY DOPED GAAS-LAYERS

Authors
BAYAZITOV RM ANTONOVA LK KHAIBULLIN IB REMNEV GE
Citation
Rm. Bayazitov et al., PULSED ION-BEAM FORMATION OF HIGHLY DOPED GAAS-LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 418-421
Citations number
6
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
139
Issue
1-4
Year of publication
1998
Pages
418 - 421
Database
ISI
SICI code
0168-583X(1998)139:1-4<418:PIFOHD>2.0.ZU;2-B
Abstract
The formation of heavily doped n-GaAs layers using continuous ion impl antation and subsequent treatment by powerful pulsed ion beams has bee n investigated. Using Auger electron spectroscopy (AES), electrical me asurements and computer simulations, correlation between donor distrib utions and electrical activation was established. It is shown that the n(+)-GaAs layers (n = 10(19)-10(20) cm(-3)) are formed in the deep ta il of the impurity atom distributions. Thermal stability of formed sup ersaturated layers was investigated. (C) 1998 Elsevier Science B.V.