SELF-CONSISTENT MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN SI-INVERSION LAYER WITH ACCOUNT OF ELECTRON-ELECTRON SCATTERING

Authors
BORZDOV VM GALENCHIK VO KOMAROV FF
Citation
Vm. Borzdov et al., SELF-CONSISTENT MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN SI-INVERSION LAYER WITH ACCOUNT OF ELECTRON-ELECTRON SCATTERING, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1998, pp. 73-78
Citations number
19
Categorie Soggetti
Physics, Condensed Matter","Physics, Applied
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
5-6
Year of publication
1998
Pages
73 - 78
Database
ISI
SICI code
0204-3467(1998)5-6:<73:SMSOHE>2.0.ZU;2-I
Abstract
Two-dimensional electron transport was studied by a Monte Carlo simula tion in the field strength range from 10(5) to 10(7) V/m. The Schrodin ger, Poisson and Boltzmann equations were solved self-consistently. Be sides electron-electron scattering, the kinetic model used took into a ccount intra- and intersubband scattering by intervalley and acoustic phonons, impurity scattering and surface roughness scattering.