P. Horsch et W. Stephan, FREQUENCY-DEPENDENT CONDUCTIVITY OF THE ONE-DIMENSIONAL HUBBARD-MODELAT STRONG-COUPLING, Physical review. B, Condensed matter, 48(14), 1993, pp. 10595-10598
The one-dimensional Hubbard model is characterized by charge-spin sepa
ration, but nevertheless in the doped system sigma(omega > 0) does not
vanish due to a small remaining coupling between charge and spin degr
ees of freedom. We derive an effective Hamiltonian and give in leading
order (approximately J2) an analytic expression for sigma(omega) for
the case of the Mott insulator doped with one hole. The complete frequ
ency dependence in the strong-coupling limit of the Hubbard model and
for the t-J model agrees with results from exact diagonalization. The
limit sigma(omega --> 0) at T = 0 is found to be very different for th
e two models, i.e., approximately omega3/2 in the strong-coupling limi
t and approximately omega-1/2 for the t-J model.