SELF-CONSISTENT CALCULATION OF LANDAU-LEVELS OF A QUASI-2-DIMENSIONALHOLE GAS AT A GAAS ALGAAS P-TYPE HETEROJUNCTION/

Authors
Citation
Ov. Volkov, SELF-CONSISTENT CALCULATION OF LANDAU-LEVELS OF A QUASI-2-DIMENSIONALHOLE GAS AT A GAAS ALGAAS P-TYPE HETEROJUNCTION/, Physics of the solid state, 40(6), 1998, pp. 1019-1027
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637834
Volume
40
Issue
6
Year of publication
1998
Pages
1019 - 1027
Database
ISI
SICI code
1063-7834(1998)40:6<1019:SCOLOA>2.0.ZU;2-0
Abstract
An efficient method is proposed for the self-consistent calculation of Landau levels of a quasi-two-dimensional hole gas at a GaAs/AlGaAs he terostructure in a perpendicular magnetic field. The method is based o n transforming the Schroedinger and Poisson equations to a system of n onlinear differential equations which are then spatially discretized a nd solved by the method of relaxation. The method proposed is used to model the optical spectra for recombination of the quasi-two-dimension al hole gas with electrons localized at: a delta layer of donors in an isolated p-type heterojunction. Particular attention is paid to effec ts associated with the dependence of the wave functions and shape of t he potential well on the magnetic field, which have not been considere d before. (C) 1998 American Institute of Physics.