ELECTRONIC TRANSPORT-PROPERTIES OF KXC70 THIN-FILMS

Authors
WANG ZH ICHIMURA K DRESSELHAUS MS DRESSELHAUS G LEE WT WANG KA EKLUND PC
Citation
Zh. Wang et al., ELECTRONIC TRANSPORT-PROPERTIES OF KXC70 THIN-FILMS, Physical review. B, Condensed matter, 48(14), 1993, pp. 10657-10660
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
14
Year of publication
1993
Pages
10657 - 10660
Database
ISI
SICI code
0163-1829(1993)48:14<10657:ETOKT>2.0.ZU;2-B
Abstract
Transport properties of KxC70 thin films doped to their maximum conduc tivity are studied. At this doping level, KxC70 (nominally K4C70) is c haracteristic of a disordered metal with room-temperature conductivity close to 600 S/cm. The conduction bandwidth is estimated as 0.5-0.6 e V. The thermopower and magnetoconductance data are similar to those of K3C60 and intercalated carbon materials. No superconducting transitio n is observed above 1.35 K.