A new technique of variable angle reflectometry (VAR) investigations o
f thin firms on thick, transparent, parallel-sided substrates is prese
nted. This technique uses spatial distribution of intensity of reflect
ed radiation of a sample illuminated with a light beam of finite diame
ter. The experimental results obtained for amorphous silicon (a-Si) we
re fitted with theoretical dependencies taking into account the optica
l inhomogeneity over the film thickness. This inhomogeneity was descri
bed by values nf, af, nb and ab Of the real part of the refractive ind
ex and absorption coefficient at the surfaces of the film. The investi
gated film was also characterized by the average over its thickness va
lues of the real part of the refractive index (n) over bar and absorpt
ion coefficient <(alpha)over bar>. For the investigated a-Si n(b) < n(
f) < (n) over bar and <(alpha)over bar> > alpha(f) > alpha(b). It can
be suggested that the presented investigations of optical inhomogeneit
y of thin films of a-Si should be taken into serious consideration for
optimized technological conditions. (C) 1998 Elsevier Science Ltd. Al
l rights reserved.