EVALUATION OF METALORGANIC PRECURSORS FOR FABRICATION OF LEAD-BASED FERROELECTRIC THIN-FILMS

Eight kinds of metalorganic precursors for metalorganic chemical vapor deposition of lead-based ferroelectric thin films were used to evalua te residual carbon concentration and growth rate of the oxide films. S econdary ion mass spectroscopy measurements indicated that Pb(DPM)(2), Zr(O-tC(4)H(9))(4), and Ti(O-iC(3)H(7))(4) are the most suitable prec ursors for reducing the carbon concentration in PbO, ZrO2 and TiO2 fil ms, respectively. Using these precursors, a Pb(Zr-0.52, Ti-0.48)O-3 th in film with a residual carbon concentration as low as 0.02 mol% was g rown at 763 K. Growth rates for various temperature were measured for six precursors. The rates obtained from alcoxide precursors, such as ( C2H5)PbOCH2C(CH3)(3), Zr(O-tC(4)H(9))(4) and Ti(O-iC(3)H(7))(4), were saturated in a wide temperature range. An epitaxial PbTiO3 film was ob tained on a (100)Pt/(100)MgO substrate at 763 K using (C2H5)PbOCH2C(CH 3)(3) and Ti(O-iC(3)H(7))(4). Precise control of the him composition i s indispensable for low temperature fabrication of Pb-based ferroelect ric thin films.