SOL-GEL FABRICATION OF ORIENTATED PZT THIN-FILMS - EFFECT OF BUFFER LAYER IN PROMOTING EPITAXIAL-GROWTH

Authors
PAIK DS RAO AVP KOMARNENI S
Citation
Ds. Paik et al., SOL-GEL FABRICATION OF ORIENTATED PZT THIN-FILMS - EFFECT OF BUFFER LAYER IN PROMOTING EPITAXIAL-GROWTH, Ferroelectrics (Print), 211(1-4), 1998, pp. 141-151
Citations number
21
Categorie Soggetti
Physics, Condensed Matter","Material Science
Journal title
Ferroelectrics (Print) → ACNP
ISSN journal
00150193
Volume
211
Issue
1-4
Year of publication
1998
Pages
141 - 151
Database
ISI
SICI code
0015-0193(1998)211:1-4<141:SFOOPT>2.0.ZU;2-L
Abstract
Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were deposited onto platinum coat ed silicon substrates with and without PbTiO3 (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110 ) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulte d in lowering of remanent polarization and an increase of coercive hel d parameters.